サファイア基板上への窒化物薄膜の製造方法及び窒化物薄膜装置

Method for producing thin film of nitride on sapphire substrate, and apparatus for thin film of nitride

Abstract

PROBLEM TO BE SOLVED: To provide a method for producing a refined thin film of a nitride on a sapphire substrate without using a resist in a less complicated process, and to provide an apparatus for the thin film of the nitride. SOLUTION: The method for producing the thin film of the nitride on the sapphire substrate comprises the steps of: hydrotreating the sapphire substrate at a high temperature: irradiating it with an electron beam; depositing the nitride to form the thin film on the substrate treated with the electron beam by a metal organic chemical vapor deposition method; and forming a pattern of the thin film of the nitride. COPYRIGHT: (C)2007,JPO&INPIT
【課題】レジストを用いることなく、微細化を図り、しかもプロセスの煩雑さを改善した、サファイア基板上への窒化物薄膜の製造方法及び窒化物薄膜装置を提供する。 【解決手段】サファイア基板上への窒化物薄膜の製造方法において、高温水素処理を行ったサファイア基板に電子線を照射し、この電子線処理基板に有機金属化学堆積法によって窒化物薄膜を堆積し、窒化物薄膜を描画する。 【選択図】 図1

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    Publication numberPublication dateAssigneeTitle
    US-8673748-B2March 18, 2014Osaka UniversityMethod for fabricating semiconductor thin film using substrate irradiated with focused light, apparatus for fabricating semiconductor thin film using substrate irradiated with focused light, method for selectively growing semiconductor thin film using substrate irradiated with focused light, and semiconductor element using substrate irradiated with focused light